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CN negative-ion beam deposited films have been investigated with respect to dependencies of a nitrogen atom content and interatomic bonding state upon the incident ion energy. The CN negative ions extracted from a sputter-type negative ion source were deposited on a silicon substrate n-Si (100) at various ion energies in a range of 25-500 eV. From Rutherford backscattering spectroscopy (RBS) measurement, the maximum of N/C ratio and atomic density in films were obtained N/C = 0.60, 1.56 × 1023 atoms · cm-3 at an ion energy of 75 eV, respectively. From X-ray photoelectron spectroscopy (XPS) analysis, nitrogen atoms in the film were found to be mostly combined with carbon atoms in bonding states of C = N and C ≡ N. The maximum fraction of C-N bond reached 11% of nitrogen content at an ion energy of 500 eV. In Raman spectroscopy, CNxfilms showed similar Raman bands to those of the diamond like carbon (DLC) film.

Ion Energy Dependence of N/C Ratio in Low Energy CN Molecular Negative-ion Beam Deposited Films.