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Ge doped amorphous SixCy : H films have been deposited by reactive rf magnetron co-sputtering of Si-Ge composite target in argon-methane gas mixture.The effect of methane partial pressure P on the structural, optical and electrical properties of the films was investigated. With increasing P, the carbon content, the optical bandgap and the activation energy of conductivity increase. Both the B-value deduced from the Tauc's optical plot and the photoconductivity decrease rapidly at high P in the undoped a-SixCy : H. The temperature dependence of conductivity shows the activated type conduction at high P, whereas the hopping conduction is predominant at low P. It is found that the addition of Ge could improve the reduction of the photoconductivity as well as the B-value at high P.

Properties of Ge doped a-SixCy:H Films prepared by co-sputtering.