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Surface roughening processes in the molecular beam epitaxy growth of GaAs are studied by in-situ scanning electron microscopy. Three types of onset of three dimensional growth, pure 3D growth, coexistence of 3D and 2D growth, and 2D to 3D transition are observed.

Two Dimensional to Three Dimensional Growth Transition during GaAs Molecular Beam Epitaxy Studied by in-situ Scanning Electron Microscopy.