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Surface structures of molecular beam epitaxially (MBE) grown GaAs (001) vicinal surfaces were investigated using a multichamber ultrahigh-vacuum scanning tunneling microscope (UHV-STM) system equipped with an MBE facility. The surface structures were compared after 30 monolayer GaAs growth. In the case of the vicinal surface cut 2° towards the [111] A direction, only A-type steps were observed on the surface. On the other hand, in the case of the vicinal surfaces cut towards [111] B and [010] direction, both A-and B-type steps were observed on the surfaces; that is, wide terraces bordered by B-type steps and narrow terraces bordered by A-type steps coexisted on both surfaces. We performed further MBE growth on these vicinal surfaces. The surface structures evolved to become more uniform, reflecting the misorientations after 1.5μm GaAs growth under the step-flow condition.

Scanning Tunneling Microscopy Observation of Molecular Beam Epitaxially Grown GaAs (001) Vicinal Surfaces.