English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Silicon nitride thin films deposited at room temperature by the method of reactive ion beam sputtering have been investigated. Silicon target was used for the film preparation with nitrogen ion beam generated in the magnetic multipole plasma source (bucket ion source). As increasing ion current, the deposition rate of the film became higher. However, we found no effects on the film composition or the optical characteristics. We used this silicon nitride thin film for the protective and the dielectric layer of magneto optical disk and the carrier to noise ratio of 48 dB was obtained.

Sillicon nitride protective film by reactive ion beam sputtering.