English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

TiN films have been successfully prepared by plasma CVD using TiI4, NH3 and H2 reaction gases. (111) oriented films with smooth and fine-grained surfaces were obtained at the substrate temperature between 450 and 750•Ž. On the other hand,non-oriented films with rugged surfaces were obtained at the substrate temperature of 850•Ž. The deposition rates of these films were 27•`30 nm/min. The lattice constants of these films decreased from 4.243 to 4.238A with increasing the flow rate of N2 gas. Micro vickers hardness of the films was confirmed to be 18-19 GPa under the optimum experimental conditions in the present study.

Preparation of TiN films by plasma CVD.