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Zn and Te layers were deposited on n-type (111) Si substrates by a vacuum evaporation technique and an ion beam evaporation technique. Thin ZnTe layers were grown on Si substrates when these samples were heated at temperatures of 300 460 °C for 120 720 sec. (111) plane of the ZnTe layers grew predominantly on (111) Si substrates. The ZnTe layers were p-type semiconductors with the carrier density of 2.55 × 1014 3.98 × 1015 cm-3. ZnTe layers grown from the thin layers prepared by mixture ion beams of Zn and Te have hardly stripped from the Si substrates. ZnTe layers prepared by other techniques have easily stripped. When the Zn and Te layers deposited on the Si substrates by the ion beam evaporation technique were annealed at temperature of 400 °C for 720 sec, both of diode and photocurrent properties on the heterojunction of ZnTe (p) -Si (n) was better than those of samples prepared by other technique.

Growth of ZnTe by Solid-state Reactions of Mixture Zn and Te Layers Prepared by an Ion Beam Evaporation Technique