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Influence of residual gas during the process of film growth has been studied by means of observation of the cross-sectional structure of the film. It has been shown that, as the vapor pressure of residual gas increases, the crystal grain boundary appears along the direction of film growth and finally it changes into the void. To make clear these results, measurement of electrical conduction and X-ray diffraction analysis in comparison with the cross-sectional structure have also been made. Finally, for the change in cross-sectional structure, phenomenological treatment of mass transfer based on the surface diffusion and deposition of atoms has also been made. It shows that these treatment agree well with the experimental results.

Influence of Residual Gas on the Process of Film Growth