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vi L INTRODUCTION 1 A. Structural and Electro-Optical Properties of Amorphous Silicon 3 1. Band-gap States 4 2. Doping in a-Si:H 10 3. Optical Absorption 12 4. Metastability 16 B. Devices 18 1. Device Models 19 2. Device Stability 21 C. Growth Chemistry 25 n. SAMPLE PREPERATION 29 A. Deposition System 31 1. Fundamentals of ECR Process 31 2. Description of ECR reactor 34 B. PECVD Processing 35 m. CHARACTERIZATION 41 A. Plasma 41 1. Langmuir Probe Theory 41 2. I-V Curve Generation and Interpretation 43 3. Determination of Plasma Parameters 45 B. Materials 47 1. Film Thickness 47 2. Photo and Dark Conductivity 48

Stability and electronic properties of amorphous silicon p-i-n devices fabricated using ECR plasma enhanced chemical deposition