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In any microelectronic device, fundamental physical parameters must be well understood if electronic properties are to be successfully optimized. One such prominent parameter is energetic trap states, which are well-known to plague amorphous or otherwise impure semiconducting materials. Organic semiconductors are no strangers to such states and their electronic properties are evidently tied to these defects. This dissertation aims to elucidate these states in organic photovoltaic (OPV) devices. The literature to date is first reviewed and the author’s contributions are subsequently detailed. Within the community, several techniques have been leveraged to study these mid-gap states. Atop the list are optical, capacitance and current based measurements and each has provided important pieces to the overall defect profile. Piecing together the works to date, organic photovoltaic materials are depicted as disordered semiconductors with a seemingly continuous distribution of both energetically shallow and deep trap bands. Upon blending the pure materials to create the modern day bulk heterojunction – the currently preferred photovoltaic architecture – energetic disorder increases and new trap bands appear. These states have been shown to stem from both intrinsic (e.g. structural disorder) and extrinsic (e.g. oxygen and synthesis contaminates) sources and it is quite clear that such states can have profound effects on, if not completely control, the electronic properties and long term stability of OPV devices. Most prominently, these states are known to enhance trap-assisted recombination, induce Fermi-level pinning and generate space-charge effects. Though these

The identification and characterization of electronic defect bands in organic photovoltaic devices