Scanning angle Raman spectroscopy in polymer thin film characterization
Author(s) -
Vy H. T. Nguyen
Publication year - 2015
Language(s) - English
Resource type - Dissertations/theses
DOI - 10.31274/etd-180810-4152
Subject(s) - raman spectroscopy , bilayer , materials science , analytical chemistry (journal) , polycarbonate , spectroscopy , stack (abstract data type) , characterization (materials science) , polystyrene , layer (electronics) , optics , polymer , chemistry , nanotechnology , composite material , physics , biochemistry , chromatography , quantum mechanics , membrane , computer science , programming language
Near-infrared scanning angle (SA) Raman spectroscopy was utilized to determine the interface location in bilayer (a stack of two polymer layers) films of polystyrene (PS) and polycarbonate (PC). Finite-difference-time-domain (FDTD) calculations of the sum square electric field (SSEF) for films with total bilayer thicknesses of 1200-3600 nm were used to construct models for simultaneously measuring the film thickness and the location of the buried interface between the PS and PC layers. Samples with total thicknesses of 1320, 1890, 2300, and 2750 nm and varying PS/PC interface locations were analyzed using SA Raman spectroscopy. Comparing SA Raman spectroscopy and optical profilometry measurements, the average percent difference in the total bilayer thickness was 2.0% for films less than ~2300 nm thick. The average percent difference in the thickness of the PS layer, which reflects the interface location, was 2.5% when the PS layer was less than ~1800 nm. SA Raman spectroscopy has been shown to be a viable, non-destructive method capable of determining the total bilayer thickness and
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