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We analyse a model describing hysteretic behaviour of the reflectivity R forthe system 'graphene-Pb(ZrxTi1-x)O3 (PZT) ferroelectric substrate-gate' with agate voltage variation, which takes into account trapping of electrons into thegraphene-PZT interface states. We demonstrate that the hysteresis in the Rparameter can be observed experimentally for the telecommunication-rangeradiation (the wavelength {\lambda} = 1.55 {\mu}m) at low gate voltages and,moreover, the phenomenon can be used while creating fast bistable systems forthe novel nonvolatile memory devices with on-chip optical interconnection.

Bistable optical system based on hysteresis in the reflectivity of grapheneon- Pb(ZrxTi1-x)O3