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Resonant-tunneling processesing electrons in a system consisting of the double-barrier resonanttunneling structure built in the Schottky barrier are studied. It is shown that the coherent tunneling can take place in this system; both the transmission rates of electrons and the current-voltage characteristic are evaluated and analyzed for such a case. The theoretical results agree perfectly well with the data obtained from the especially performed experiment.

Coherent tunneling in a semiconductor system: Double barrier resonant-tunneling structure built in the Schottky barrier