English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Electrical and photoelectrical properties of Al/porous silicon/ monocrystalline silicon sandwichstructures (Al/PS–(c-Si)) based on nanostructured porous silicon, obtained by electrochemical anodization of monocrystalline silicon wafers are reported. The photosensitivity of Al/PS–(c-Si) structures is determined by PS layer photoconduction. The photoelectrical method of definition of effective band gap in the vicinity of PS–(c-Si) heterojunction is proposed. The opportunity of definition of the effective diameter of quantum wires is shown. Diffusion length of the minority charge carriers in porous silicon is determined by the method of reverse photocurrent.

Determination of structure parameters of porous silicon by the photoelectric method