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1 Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100086, China 2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China 3 Lyles School of Civil Engineering, Birck Nanotechnology Center, Sustainable Materials and Renewable Technology (SMART) Lab, Purdue University, West Lafayette, IN 47906 USA 4 Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla MO 65409, USA *E-mail: lzq@semi.ac.cn 1,2* 1,2 1,2 4 3 1,2 Zhiqiang Liu, Xiaoyan Yi, Junxi Wang, Ian Ferguson, Na Lu and Jinmin Li View Article Online

Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN via Mg Co-doped with 4d-Element (In)