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Heteroatom doping is an efficient way to tailor the electrochemical properties of carbon-based energy storage materials. However, synthesizing nitrogen-doped carbon materials with high doping level (e.g. over 10.0 at.% N content) and controllable doping contents is very challenging. Herein, a tablet-sintering method using two nitrogen sources (ammonia and urea) is proposed to realize the regulation of nitrogen contents in carbon materials from 4.8 at.% to almost 12.0 at.%. Optimized sample with 10.1 at.% nitrogen content demonstrates excellent pseudocapacitive

Controllable Synthesis of Nitrogen-doped Graphene Oxide by Tablet-sintering for Efficient lithium/sodium-ion storage