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In this paper, (NH4)2S and S2Cl2 are used as passivating agent for the sulphuration treatment to GaAs0.03Sb0.97. The effect of surface passivation of GaAs0.03Sb0.97 by (NH4)2S and S2Cl2 treatment is investigated by using photoluminescence (PL), Atomic Force Microscope (AFM). Compared with the pristine sample, the PL intensities of GaAs0.03Sb0.97 that treated by (NH4)2S and S2Cl2 both are increased significantly. The PL intensity is strongly dependent on passivation time. For the 10s S2Cl2treated sample, the peak intensity is about 1.4 times larger than 20 min (NH4)2S-treated sample. Meanwhile, AFM images indicate that the roughness of the S2Cl2 treated sample is smaller than the (NH4)2S treated sample. Thus, S2Cl2 passivation is an effective method in improving the optical properties of GaAs0.03Sb0.97 material. Keywords-component; GaAsSb; Passivation; (NH4)2S; S2Cl2; Photoluminescence

Sulfur Passivation of GaAsSb alloy layer Surfaces: Comparison of Ammonium Sulfide and Disulfur Dichloride Solutions