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In this paper, an a-Si:H/a-SiC:H separated absorption and multiplication region superlattice avalanche photodiode (SAM-SAPD) using combined effect of band edge discontinuity and build-in potential in p-n junction is designed and fabricated successfully. The formula that describe the relationships among excess noise factor (Fe), mean multiplication ( e M ), and the ionization rate ratio (ks) for this SAM-SAPD are established theoretically. The comparisons between the theoretical calculations and the experimental results for Fe vs. Me are discussed.

Excess Noise Factor of a-Si:H/a-SiC:H Separated Absorption and Multiplication Region Superlattice-like Avalanche Photodiodes (SAM-SAPDs)