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The article deals with the methods for producing silicon carbide (4H-SiC) mono-crystals and films using the Schottky barrier. A nonlinear model of the Schottky barrier height and a composite model for the CVC of the total emission current were developed. An induction heating method for producing SiC monocrystals at 2000-25000С was developed. On the basis of the full-scale model of this method, a patented unit for producing perfect SiC monocrystals was designed [1]. Models of thin SiC film growth were analyzed.

proceedings of the international symposium "engineering and earth sciences: applied and fundamental research" dedicated to the 85th anniversary of h.i. ibragimov (isees 2019)

Production of Single Crystals, Films and Characteristics of Schottky Diodes Based on 4H-SIC and its Solid Solutions