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The InGaAs/InP avalanche photodiodes (APDs) are one of the most practical devices for single-photon detection at the near-infrared wavelengths. In this paper, we report a Chinese-made InGaAs/InP APD based single-photon detector operated at 1.25 GHz. The combining technique of sine-wave gating and low-pass filtering was employed to suppress the spike noise. Detection efficiency of 20% was attained with the dark count rate of 2.34×10 per gate and the afterpulse probability of 2.1% at -25°C. These performance parameters were measured to be approximately the same as the imported APD, showing that the manufacturing technology and performance of the InGaAs/InP APD had a great progress in China.

1.25 GHz Single-photon Detection with Sinusoidally Gated InGaAs/InP Avalanche Photodiode