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In this paper, boron doped diamond (BDD) thin flms have been deposited on Ti-based substrates with or without a Ta intermediate layer by microwave plasma chemical vapour deposition (MWCVD). Raman spectroscopy and scanning electron microscopy (SEM) examinations demonstrate that the electrode has well-defined diamond features. XRD spectroscopy shows no TiC in the BDD film on the Ti substrate with Ta buffer layer. It is observed that both the BDD electrodes have similar overpotential 2.5V for water electrolysis prohibiting the evolution of oxygen in the cyclic voltammetry test. Further more,the removal efficiency of chemical oxygen demand (COD) approaches to 100% in the electrochemical oxidation of wastewater containing phenol.

The structure and electrochemical properties of BDD deposited on the Ti-substrate with Ta buffer layer