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ZnMn2O4 films with a structure of Ag/ZnMn2O4/p-Si were fabricated on p-Si substrate by magnetron sputtering. The effects of sputtering power on microstructure, resistance switching properties and endurance characteristics of ZnMn2O4 films were investigated. ZnMn2O4 films are spinel structure and the sputtering power has not changed their phase structure. ZnMn2O4 film samples deposited at a sputtering power below 100W are homogeneous and compact, but too high sputtering power would degrade the quality of ZnMn2O4 films. Bipolar resistive switching behavior and good endurance characteristics have been observed in Ag/ZnMn2O4/p-Si devices deposited at different sputtering power. The ZnMn2O4 films deposited at a sputtering power of 80W have the highest RHRS, biggest RHRS/RLRS ratio, but the ZnMn2O4 films deposited at a sputtering power of 100W have the lowest VON and VOFF. The resistive switching for all specimens can be repeated stably for over 1000 cycles, which indicated that the sputtering power has not significant influence on the read/write endurance characteristic.

Effects of Sputtering Power on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering