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A simple analytical model for the lateral channel electric field profile in the velocity saturation region of the FinFET with undoped body is proposed and developed by solving the Poisson Equation in the velocity saturation region with a simplified boundary condition. The model has been verified with two-dimensional numerical device simulators and good agreement is obtained. Using the model, the impact of geometrical parameters including silicon film thickness, gate oxide thickness, and the terminal biases on the maximum lateral channel electric field in the FinFET can be predicted. Keywords-double-gate MOSFET; FinFET; channel electrical field; velocity saturation

Analytical Model of Channel Electric Field Profile in FinFET