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A paraboloidal concentrator with homogenizer was developed for a three-junction GaP/InGaAs/Ge solar cell. The concentration ratio of this system was 200X and the photovoltaic cell was cooled by heat pipe. According to the experiment result, when the average direct solar radiation and the ambient temperature was 600W/m and 28.9°C respectively, the average peak output power was 2.07W/cm2, the average open circuit voltage was 2.72V, the average short circuit current was 0.65A, the average efficiency was 26% and the average working temperature was 63.5°C. The influencing factors of the GaP/InGaAs/Ge triple-junction solar cell electrical properties mainly include direct solar radiation and solar cell temperature. The research results which were collected in this experiment would be applied to analyze and discuss the influence of relevant parameters on the performance of high concentration photovoltaic system.

Characterisation of the multi-junction solar cell with dish-style photovoltaic concentration system