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Ce-doped ZnO thin films were deposited on simple glass substrate and SiO2 substrate by sol-gel technique. The characteristics were studied by X-ray diffraction (XRD), atomic force microscope (AFM) and photoluminescence (PL) spectroscopy, respectively. The X-ray diffraction (XRD) experiments shows that most of the samples are highly c-axis oriented, furthermore, the c-axis oriented was improved as the annealing temperature arised. The PL spectrum shows obvious peak near 390nm. The intensity of eigen peak was improved as the annealing temperature arised, but the intensity of peaks in visible region was restrained as the annealing temperature arised. The morphology of the samples studied by the AFM shows an increase in the annealing temperature causes the surface flatter and the grain size larger.

The Effect of Annealing Heat Treatment on Structural and Optical Properties of Ce-doped ZnO Thin Films