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An igbt cell structure based on semiconductor physics were designed. The process parameters of the high-voltage igbt have been calculated and adjusted. Using the optimal device's dimensions, the doping concentration was analyzed systematically. Additionally, a simulating model of igbt was compiled based on sentaurus process. According to this model simulation, an optimized device parameters' design was further determined. Finally, the device drain-source breakdown voltage has satisfied a standard value of 1450v.whereas its threshold voltage is 4.2v, which is in the prerequisite range of 3~5v.

Design and process simulation on power device IGBT