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The super junction (SJ) drift is used in internal transparent collector IGBT. The influences of position of local carrier lifetime region, local carrier lifetime, and buffer layer doping level on the devices' trade-off characteristics have been simulation studied. The results show that for given local carrier liftetime, the turn-off losses may have a valley value Eoffmin. The higher local carrier lifetime is, the higher Eoffmin will be. Several factors are at work. Competition effects for excess carrier extraction through reverse biased super junction and forward biased collector may be one reason. Infinite excess carrier recombination velocity in local carrier lifetime control region leads to the back-emitter injection efficiency γe be no less than certain value. In addition; increasing buffer layer doping level appropriately could win better trade-off and wider trade-off range.

Simulation Study on Internal Transparent Collector IGBT Using Superjunction Drift