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we studied the mechanism of original nand p-type “intrinsic” organic films 8-Hydroxyquinoline aluminum (Alq3) and N, N’-bis-1-naphthyl-N, N’-diphenyl-1, 1’-biphenyl-4, 4’-diamine (NPB) via using molybdenum trioxide (MoO3) as a p-type dopant. It is found that the conductivities extracted from “holes-only” devices both for Alq3 and NPB films are improved as a function of doping molar ratio (MR) of MoO3. However, the differences of change of conductivities in NPB films and Alq3 films after doping can be found, where (1) a rapid increase of conductivity in Alq3 with slope S>1 is shown in the entire MR range; (2) in NPB films, the conductivity changes with a slope of S>1 can be found in the low doping region (MR<~0.04) and a slope of ~1 can be found with MR>~0.04. According to these observation, we proposed that different distributions of occupied and unoccupied DOGS in energy gap of organic films is the origin of “intrinsic” n-/ptype organic films, and therefore can be passivated differently via MoO3. These findings suggest the effective way for improving free carriers concentrations by reducing DOGS in organic films.

Study of Molybdenum Trioxide as a P-Type Dopant in Organic Semiconductors: The Influence of Density of Gap States on Their N-/P- Type Characteristics