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Based on the existing theoretical study of Bi2Te3 nanowires, this paper establishes the relationships among the band structure, relaxation time and ZT values by solving the Boltzmann equation. Then, comprehensive analysis is made to figure out how these factors have influence on ZT values of Bi2Te3 thermoelectric materials, including the size of rectangular nanowires, doping concentration and temperature. The results show that level discretization occurs because of the quantum size effect, when the relationships between the relaxation time and ZT values have been built. Therefore, ZT values of Bi2Te3 nanowires have step oscillation changes with the change of the side length, doping concentration and temperature. Among four types of Bi2Te3 rectangular nanowires researched in this paper, the thermoelectric performance of the p-type nanowires with [110] direction is best for the ZT value reaching 65.3, when the side length ax = 6.5nm, az = 5.3nm, doping concentration n = 4.41018cm-3 and temperature T = 300K.

Thermoelectric Performance Theory Research on Bi2Te3 Nanowires under the Quantum Size Effect