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Synchrotron radiation X-ray absorptionmeasurements wereperformed to study the structure of Si-doped n-type GaN layers grown on sapphire by metalorganic chemical vapor deposition (MOCVD) and undoped GaN epitaxial layers grown on Si by molecular beam epitaxy (MBE).It was found that the anisotropic characteristic of p-orbital from GaN/sapphire grown by MOCVD is somehow larger than GaN/Si grown by MBE.In addition, values of the lattice constant of different GaN films were deduced from the interatomic distances in the second coordination shell around Ga byextended X-ray absorption fine structure (EXAFS) analysis and the residual strain of the films was then deduced. The calculation results shows that the strain type is different in the two sets of samples which is due to the different substrate and AlN buffer layer.

GaN Films under Different Growth Mechanisms Studied by Synchrotron X-ray Absorption Spectroscopy