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The samples of CuIn1-x-yCexCoyTe 2 were successfully synthesized by vacuum arc-melting method. The structure and optical and electric properties of Ce and Co doped CuInTe2 have been investigated using Powder X-ray diffraction(XRD), scanning electron microscopy(SEM), ultraviolet and visible spectrophotometer (UV-vis), respectively. The result shows that the Ce and Co doped CIT has the chalcopyrite structure with a space group of I-42d.The lattice parameters shows no obvious regulation with the increase of Co content. The SEM morphologies indicate that the grain sizes tend to decrease with the increase of Co content in CuIn1-x-yCexCoyTe 2 semiconductor. The band gap Eg also increases from 1.17eV to 1.27eV. It reveals that the increase of Co content is helpful for the absorption of spectra with special frequencies.

Structures and Photoelectric Properties of Ce and Co Doped CuInTe2 Semiconductor