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The paper consists of calculation of strains in the In1–xGaxAs/GaAs heterostructure and their dependence on relation between the thicknesses of contacting semiconductors. It also features the examination of how concentration of components and relation between the thicknesses of layers influences the key parameters of the zone energy diagram of heterostructure. Keywords— strained heterostructure, Gallium Arsenide, Indium Gallium Arsenide, deformation, strains, zone diagram.

INFLUENCE OF ELASTIC STRAINS ON ZONE ENERGY DIAGRAM OF In1 n xGaxAs/GaAs HETEROSTRUCTURE