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Digital Object Identifier 10.29292/jics.v15i2.200 Abstract— This work presents a study on the effects of interface traps throughout the Junctionless Nanowire Transistor (JNT). The results are obtained by analyzing the Random Telegraph Signal noise of the device against frequency, which consists of an exception of the generation-recombination noise. The results obtained are mostly from numerical simulations, validated through experimental data. It has been considered a decrescent exponential trap profile along the bandgap. The traps are distributed from the conduction band to the valence band. It was possible to verify that the RTS of junctionless devices presents two different well-defined behaviors when biased at different operating regimes. At partial depletion, a noise plateau has been observed with small variation in the corner frequency, indicating a small variation of the carriers’ lifetime. At accumulation, the noise plateau reduces with the gate voltage and the corner frequency increases, indicating a reduction in the carriers’ lifetime.

Effect of Interface Traps on the RTS Noise Behavior of Junctionless Nanowires