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In this review, authors have retrospect the state-of-art dimension scaling and emerging other non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and Cylindrical Surrounding Double-Gate (CSDG) MOSFET. These are presented for the future devices to reduce the short channel effects for the next generation communication system as the dimension of device approaches to the nanometer regime. The discussion on advantages and compact modeling approaches of both the MOSFETs have been presented. Moreover, these compact models are very useful to understand the physical characteristics of devices and also necessary for the circuit simulators, which are presently most growing research areas. Therefore, a review of the various approaches to developing the complete compact models for DG MOSFETs and CSDG MOSFET is necessary. The significant effect that is the short channel effects are also looked upon with the help of reported literatures. In addition to this, with the next generation communication prospective, the DG MOSFETs and CSDG MOSFETs have been discussed, which prove to be advantageous for the Terahertz (THz) frequency regime where high speed data transmission and reduced power consumption are the major requirements.

Advanced MOSFET Technologies for Next Generation Communication Systems - Perspective and Challenges: A Review