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A R T I C L E I N F O A B S T R A C T Article history: Received: 26 December, 2020 Accepted: 31 January, 2021 Online: 25 February, 2021 In this paper, we investigate and analyze parameters degradation in a typical photovoltaic (PV) cell, which lead to power loss under dark as well as light condition using measured current-voltage (I-V) data. A nonlinear least squares method to extract the parameters such as the reverse saturation currents, the ideality factors, the series and shunt resistances of the cell from the dark current-voltage (I-V) curves is used. In order to analysis the sensitivity of the dark current-voltage (I-V) measurement to each of the six extracted parameters as a function of the voltage as well as the temperature and the density current, we simulate the operation of a silicon solar cell (KXB0022-12X1F). The analysis of the dark current-voltage (I-V) curves permit us to detect variation as small as 15% in the series resistance. We also extends the use of dark as well as light current-voltage (I-V) measurements to modules configurations of cells and uses a nonlinear least squares method to evaluate the cell efficiency parameters in the modules. Results obtained show a degradation of the values of the maximum power (Pmax) as compared to initial values by about 12, 3%, 12, 06% and 10, 21 % respectively in Total-Cross-Tied (TCT), Bridge-Link (BL) and Honey-Comb (HC) configurations.

Parameters Degradation Analysis of a Silicon Solar Cell in Dark/Light Condition using Measured I-V Data