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Photoacoustic (PA) spectra on ZnO and CdO compound semiconductor sintered at 600°C for 24 h in glass tube were measured. CdO concentration was changed from 0% to 10% (0, 1, 3, 4, 5, 7 and 10% CdO) and CdO (99.9% purity) powder was also measured for comparison. The PA spectra were constructed from the PA signals of Zn1-xCdxO at the short wavelength region and those of CdO above 450 nm. Using the PA spectra below 450nm, the Cd contents dependence of the band gap of Zn1-xCdxO can be estimated. The band gap was modulated below 5% CdO samples and not changed above 5% CdO samples because the maximum CdO concentration might be between 5% and 7%.

Photoacoustic Spectra on the ZnO and CdO Compound Semiconductor.