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Formation of both (Zn1-xInx)O1+x/2 solid solution and (ZnO)mIn2O3 compound was investigated by firing the precipitates through mixed aqueous solution of Zn and In nitrates. The solid solution range was enlarged to 15% by its gel formation adding citric acid. The homologous (ZnO)mIn2O3 compound (m>12) with very long interlayer distance precipitated around 650°C by heating the homogenous solid solution. It gradually decomposed to the compounds with m<12 and finally crystallized as a compound with the corresponding starting m-composition. Its thin film was prepared by dip coating method using diethylene glycol as a solvent. The film fired at 600°C was transparent in a wavelength range longer than 400nm. Its electrical resistivity gradually decreased to ca. 0.01Ωcm with the amount of doped In.

Low Temperature Preparation of Transparent Conducting Material in ZnO-In2O3 System by Homogenenous Aqueous Solution Method.