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A new etching method of semiconductor materials using ionization of CF4 gas by synchrotron radiation (SR) and acceleration of SR-generated ions by external electric field is proposed. The SR is irradiated parallel to the substrate and the electric filed is applied perpendicular to the substrate. The dominant quasi-stable gas-phase ion is CF3+ which is measured by photoionization mass analysis. This method is applied to etch silicon substrate having resist mask and fine pattern of 0.1μm line and space is successfully fabricated.

Fine pattern etching of silicon using SR-assisted ionization of CF4 gas.