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The suppression of line width roughness (LWR) is the most difficult task in the development of resist materials used for sub-10 nm fabrication. We have investigated the feasibility of the fabrication of line-and-space patterns with 7 nm quarter-pitch (7 nm space width and 28 nm pitch) with a chemically amplified resist process, assuming electron beam (EB) lithography. In this study, we investigated the requirement for suppressing LWR to 10 and 20% critical dimension (CD), using the simulation on the basis of the reaction mechanisms of chemically amplified EB resists. The simulation results suggested that the suppression of LWR to 20% CD is feasible, while 10% CD LWR is away from the current status of chemically amplified resists.

journal of photopolymer science and technology

Requirement for Suppression of Line Width Roughness in Fabrication of Line-and-Space Patterns with 7 nm Quarter-Pitch Using Electron Beam Lithography with Chemically Amplified Resist Process