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By the combination of EB (electron beam) pattern irradiation and UV (ultraviolet) exposure processes, negative tone pattern can be formed in a positive type resist film. It is well known that a novolac resin based resist film can be crosslinked by thermal and EB irradiation processes. By changing the EB irradiation and UV light exposure doses, a dissolution resistance of the resist film to TMAH (tetramethylammoniumhydroxide) alkaline aqueous solution can be controlled. As the result, the EB/UV hybrid lithography is effective for the fabrication of difference height patterns in a single resist layer. A dose response characteristic of a resist film is determined. A roughness of resist pattern in EB/UV hybrid lithography is also discussed. As an application, a micro square vessel array is fabricated used for a bioelectronic field

Negative Pattern Formation in Positive Resist Layer by EB / UV Hybrid Lithography