English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

EUV lithography has been desired as the leading technology for single nm half-pitch patterning. However, the source power, masks and resist materials still have critical issues for mass production. Especially in resist materials, RLS trade-off is the key issue. To overcome this issue, we are suggesting Dry Development Rinse Process (DDRP) & Materials (DDRM) as the pattern collapse mitigation approach. This DDRM can perform not only as pattern collapse free materials for fine pitch, but also as the etching hard mask against bottom layer (spin on carbon: SOC). In this paper, we especially propose new approaches to achieve high resolution around hp10nm. The key points of our concepts are 1) control PR profiles, 2) new solvent system to avoid chemical mixture, 3) high etching selective DDR materials and 4) high planar DDR materials. This new DDRM technology can be the promising approach for hp10nm level patterning in N7/N5 and beyond.

Dry Development Rinse Process (DDRP) & Materials (DDRM) For EUVL