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Directed self-assembly (DSA) technique has been focused as the novel semi-conductor manufacturing process replacing photo-lithography process for semi-conductor applications. We synthesize block copolymers (BCP) containing silicon unit, which show cylinder and lamellae structure from micro-phase separation by only heat annealing (220 C/ 60 sec). Moreover, we could get hexagonal cylinder, maybe lamella structure along the guide pattern for pattern division by grapho-epitaxy. The examined BCPs are expected to be promising materials for sub 10 nmhP patterning.

Development of Directed Self-Assembly Materials for Sub 10 nm Patterning