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We have investigated the process margin for fabrication of line/space directed self-assembled (DSA) patterns using a simulation method based on self-consistent field theory. We studied three systems, namely, chemoepitaxial DSA using lamellar-forming block copolymers (BCPs), graphoepitaxial DSA using lamellar-forming BCPs, and graphoepitaxial DSA using cylindrical BCPs. In the case of the chemoepitaxial DSA, both the subtle change of the wetting condition and the topography of the prepattern surface were found to strongly affect the process margin of the pinning layer width. In the case of the graphoepitaxial DSA using cylindrical BCPs, both the pattern pitch and CD of the forming DSA cylindrical patterns were found to intensely depend on both the trench width and the film thickness of the BCPs.

Process Evaluation of Directed Self-assembly Lithography using Simulation Method based on Self-consistent Field Theory