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We here designed a new hybrid resist for UV-NIL based on the thiol-yne photopolymerization. The hybrid resist is comprised of bifunctional polyhedral oligomeric silsesquioxane containing octyl and mercaptopropyl groups (POSS-OA-SH) and difunctional alkyne. The obtained hybrid resists possess numerous desirable characteristics for UV-NIL, such as great coating ability, high thermal stability, low surface-energy, low bulk volumetric shrinkage (0.8~4.8%), and excellent oxygen-etch resistance. Because of the click reaction characteristics of thiol-yne photopolymerization, the hybrid resists can be photo-cured within seconds under UV exposure at room temperature. Finally, through the double-layer resist approach for pattern transfer onto silicon substrate, the transfer pattern with the height of about 3 times more than that of the original NIL pattern can be obtained due to excellent oxygen-etch resistance of the etch barrier material. These results provide the thiol-yne hybrid resists as an alternative for UV-NIL.

Thiol-yne Photo-curable Hybrid Resist: An Alternative for UV Nanoimprint Lithography (UV-NIL)