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The pattern size control of polymethylmethacrylate (PMMA) and polystyrene (PS) patterns fabricated by the thermal nanoimprint process is carried out by the conventional UV/O3 treatment under atmospheric and low pressures. The pattern height decreases faster than the pattern width. The line width control by the UV/O3 treatment should be carried out carefully. The stretched resist layer is often observed along the cutting surface when a substrate with resist patterns is cut. The formation of the stretched layer can be effectively suppressed by the short UV/O3 treatment.

Pattern Size Trimming by UV Exposure for Resist Patterns Fabricated by Thermal Nanoimprint Lithography