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The outgas components from photoresists exposed to light sometimes form on the lenses and mirrors of aligners and are detrimental to their optical properties. This has recently become a major problem, and thus it is important to know the extent of outgassing from such resists when considering the effects of the outgas. We attached a QCM mass spectrometer to a 248 nm reaction analysis exposure tool equipped with a mercury-xenon (Hg-Xe) lamp light source and traced the change in the photoresist mass to investigate the amount of outgassing from a 248 nm chemically amplified photoresist during exposure. We collected the outgas generated from the resist during exposure in a TENAX absorber and identified the outgas components using a GC-MS. We also conducted an in-situ observation of the reaction in the photoresist using a PAGA-100 deprotection reaction analysis system and investigated the relationship between the outgas emission and the deprotection reaction. The results of these experiments are reported in this paper.

In-situ Measurement of Outgassing from Chemically Amplified Resist during Exposure to 248nm Light