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Influences of surface defects of silicon substrate on nucleation density of diamond synthesized in gas phase are investigated. Diamond is synthesized from methan-hydrogen using hot filament method. Substrate surface is treated by methods of ultrasonic treatments of abrasive particles of silicon carbide and diamond. Observations of nucleation phenomena are carried out by TEM, SEM and Raman spectroscopy. It is revealed that defects are induced in the thin surface layer by the treatments. These defects are almost edge dislocations. The surface treated by ultrasonic diamond particle method is very effective on nucleation of diamond because of high edge dislocation density in the surface layer with about 50 nm in depth. The nucleation of diamond most likely occurs on the cross points of edge dislocations and the surface.

Effects of surface treatment of silicon substrate on nucleation density of diamond synthesized in gas phase.