English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting Diode A 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN monocrystalline layers with a surface roughness of < 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, an n-doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier. AlGaN-InGaN-GaN Gaismas Diode Tuvajam Ultravioletam Rajonam Izmantojot metālorganikas ķīmisko tvaiku uzklāšanas metodi (MOCVD) uz safīra pamatnes, izveidota InGaN/AlGaN gaismas diode (LED) ar emisijas maksimumu pie 382 nm. Izstrādāta metodika monokristālisku nelegētu, Si- un Mgdopētu GaN un AlxGa1-xN, kur x<0.3 slāņu audzēšanai ar virsmas raupjumu mazāku par 1 nm, kuri nepieciešami LED multislāņu struktūras audzēšanai. Lai palielinātu LED gaismas emisijas efektivitāti, izveidota modificēta vienas kvantu akas (SQW) struktūra. Papildus konvenciālam p-legētam AlGaN:Mg elektronu pārplūšanu bloķējošam barjēras slānim SQW ietverts n-dopēts AlGaN:Si barjeras slānis, kurš rada papildus elektronu tunelēšanas barjeru.