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We present a theoretical analysis of the quantum efficiency of a resonant cavity enhanced InGaAs/GaAs p-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matrix method and an energy conservation law is offered. Using anomalous dispersion (AD) mirror, flat-topped QE spectrum has been obtained. Conditions for ideal flat-topped spectral response have been received. A design with a maximum QE of 93.5% and 3-nm bandwidth at 0.02 dB below the peak is presented.

Influence of anomalous dispersion mirror properties on quantum efficiency of InGaAs/GaAs resonant cavity photodetector