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Mn inclusion in the oxide based diluted magnetic semiconductor Zn1−xMnxO (x = 0.04, 0.06, 0.08, and 0.10) grown by standard high temperature solid state reaction technique has been studied. The local and average structure of Zn1−xMnxO was characterized by the super resolution technique maximum entropy method and pair distribution function analysis using the X-ray powder data. Magnetic studies on this material using a Vibrating Sample Magnetometer were also carried out to ascertain the doping level in Zn1−xMnxO.

chemical papers

Doping level of Mn in high temperature grown Zn1−x                      MnxO studied through electronic charge distribution, magnetization, and local structure